Applied Physics Express and JJAP

[2025 OPEN ACCESS]
MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
2025 Appl. Phys. Express 18 076501

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#amplifiers
#GaN
#HEMT
#AlN
#bandgap
#platform

[2024 OPEN ACCESS]
Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers
2024 Appl. Phys. Express 17 011007

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#Nitrogen
#beam
#GaN

[2025 OPEN ACCESS]
RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
2025 Appl. Phys. Express 18 075001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#radio
#frequency
#reflectometry
#quantum

[2024 OPEN ACCESS]
Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications
2024 Appl. Phys. Express 17 011006

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#GaN
#ohmic
#HEMT

[Open Access]
Surface activated Cu/SiO2 hybrid bonding for room temperature 3D integration
2025 Jpn. J. Appl. Phys. 64 03SP07

iopscience.iop.org/article/10.3...

#JJAP
#Physics
#Openaccess
#bonding
#wafer
#surface
#hybrid

OPEN ACCESS
Temperature dependence of barrier height in a Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on the thermionic emission-diffusion model
2025 Appl. Phys. Express 18 074001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#diode
#gallium
#oxide

[2024 OPEN ACCESS]
Ultralow thermal conductivity of amorphous silicon–germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation
2024 17 011005

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#thermal
#conductivity
#silicon
#germanium

[INVITED REVIEW : FREE ARTICLE]
Bulk photovoltaic effect in ferroelectrics
2024 Jpn. J. Appl. Phys. 63 060101

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#JJAP
#Physics
#review
#Bulk
#photovoltaic
#ferroelectrics

[2025 OPEN ACCESS]
Terahertz emission from intrinsic Josephson junctions in trilayer cuprate superconductor Bi2Sr2Ca2Cu3O10+δ
2025 Appl. Phys. Express 18 073001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#Intrinsic
#Josephson
#junction
#Bi2223
#terahertz
#emitter

[2024 OPEN ACCESS]
Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching
2024 Appl. Phys. Express 17 011004

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#interface
#HEMT
#hydroxide

[Review]
Recent advances in the physics of Dirac plasmons in graphene and related 2D materials and their THz device applications
2026 Appl. Phys. Express 19 020103

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#APEX
#OA
#オープンアクセス
#Review
#Physics
#plasmon
#graphene
#terahertz
#2D
#laser
#transistor

[Open Access]
Hydroxide and fluoride catalyzed bonding interface closure for low-temperature wafer bonding
2025 Jpn. J. Appl. Phys. 64 03SP06

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#JJAP
#Physics
#Openaccess
#Wafer
#bonding
#catalysis
#silicon
#dioxide
#energy
#XRR
#silica
#chemistry

[Open Access]
Fabrication of low-resonant-frequency inertial MEMS using through-silicon DRIE applied to silicon-on-glass
2024 Jpn. J. Appl. Phys. 63 056501

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#JJAP
#physics
#Openaccess
#MEMS
#inertial
#sensor
#DRIE
#Silicon
#Glass

[2025 OPEN ACCESS]
Spin properties of shallow ensemble nitrogen-vacancy centers in a 12C-enriched diamond surface layer
2025 Appl. Phys. Express 18 072003

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#APEX
#OpenAccess
#Physics
#NV
#nanoscale
#NMR
#diamond

[2024 OPEN ACCESS]
Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation
2024 Appl. Phys. Express 17 011003

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#SiO2
#GaN
#MOS

[Open Access]
Improvement of the fabrication process for top-down GaN nanowires using contactless photo-assisted electrochemical etching
2025 Jpn. J. Appl. Phys. 64 03SP02

iopscience.iop.org/article/10.3...

#JJAP
#Physics
#Openaccess
#GaN
#nanowire
#PEC
#etching

[Open Access]
Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films
2024 Jpn. J. Appl. Phys. 63 055508

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#JJAP
#physics
#Openaccess
#thermal
#conductivity
#crystallinity
#2D
#dichalcogenides
#magnetron
#spectroscopy

[2025 OPEN ACCESS]
Ultrashort gain-switched pulse trains from laser diodes characterized by a single-shot up-conversion time microscope
2025 Appl. Phys. Express 18 072002

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#APEX
#OpenAccess
#Physics
#switch
#laser
#diode
#spectroscopy
#pulse
#conversion

[2024 OPEN ACCESS]
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
2024 Appl. Phys. Express 17 011002

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#APEX
#OpenAccess
#Physics
#epitaxial
#GaN
#sputtering
#ScAlN

[Open Access]
Analysis of ESD capability of SiC MOSFET with various cell designs
2025 Jpn. J. Appl. Phys. 64 02SP26

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#JJAP
#physics
#Openaccess
#electrostatic
#discharge
#oxide
#semiconductor
#transistor
#chip

[INVITED REVIEW : FREE ARTICLE]
Quantitative analysis of optical emission spectroscopy for plasma process monitoring
2024 Jpn. J. Appl. Phys. 63 050102

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#JJAP
#Physics
#review
#optical
#spectroscopy
#plasma

[2025 OPEN ACCESS]
A design for terahertz-driven isolated sub-femtosecond electron pulses
2025 Appl. Phys. Express 18 072001

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#APEX
#OpenAccess
#Physics
#ultrafast
#electron
#pulse
#terahertz

[2024 OPEN ACCESS]
Lattice thermal conductivity of β-, α- and κ- Ga2O3: a first-principles computational study
2024 Appl. Phys. Express 17 011001

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#APEX
#OpenAccess
#Physics
#thermal
#conductivity
#Ga2O3
#Firstprinciples

[Open Access]
Ray-based automatic tuning of a single quantum dot in a GaAs/AlGaAs quadruple dot array
2025 Jpn. J. Appl. Phys. 64 02SP22

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#JJAP
#physics
#Openaccess
#GaAs
#AlGaAs
#quantum
#dot
#machinelearning
#spin
#computing

[INVITED REVIEW : FREE ARTICLE]
Design strategy of extreme ultraviolet resists
2024 Jpn. J. Appl. Phys. 63 050101

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#JJAP
#Physics
#review
#extreme
#ultraviolet
#resist

[2025 OPEN ACCESS]
Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface
2025 Appl. Phys. Express 18 071002

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#Hole
#trap
#GaN
#MOSFET
#Boron
#doping

[2024 OPEN ACCESS]
Origin of broadband acoustic emission from a dancing cavitation bubble
2024 Appl. Phys. Express 17 127002

iopscience.iop.org/article/10.3...

#APEX
#Physics
#OpenAccess
#Acoustic
#cavitation
#emission
#Broadband
#noise
#sonoluminescence

[2025 OPEN ACCESS]
High performance vacuum annealed β-(AlxGa1−x)2O3/Ga2O3 HFET with fT/fMAX of 32/65 GHz
2025 Appl. Phys. Express 18 071001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#vacuum
#gallium
#oxide
#HFET
#frequency

[Spotlights]
High Mg activation with suppressed Mg diffusion during ultra-high-pressure annealing via sequential nitrogen-ion implantation in Mg-ion-implanted GaN
2025 Appl. Phys. Express 18 066502

iopscience.iop.org/article/10.3...

Spotlights
iopscience.iop.org/journal/1882...

#APEX
#OpenAccess

[2024 OPEN ACCESS]
Fabrication and characterization of strain-induced graphene for chemisorption-based graphene resonant mass sensors
2024 Appl. Phys. Express 17 127001

iopscience.iop.org/article/10.3...

#APEX
#Physics
#OpenAccess
#MEMS
#resonator
#graphene
#SARS
#CoV2